PURPOSE:To eliminate a radiation insensitive region and to obtain a high number of pixels by a method wherein a common bias electrode is formed on the surface on the radiation incidence side of a compound semiconductor substrate and signal extraction electrodes, which consist of electrodes and bumps and correspond to the individual pixels, are formed on the rear of the substrate. CONSTITUTION:A common bias electrode 2 is formed on the surface on the radiation incidence side of a compound semiconductor substrate 1 and a plurality of signal extraction electrodes 3, which consist of electrodes and solder bumps 4 and correspond to individual pixels, are formed on the rear of the substrate 1. In the formation of the bumps 4, a photoresist film 9 is formed on bump 4 formation parts on the electrodes 3 and an SiOx passivation film 5 is formed on the whole surface. Then, after a margin is left to form a photoresist film 10, an Au film 11 for plating current supply use is formed on the whole surface. Moreover, a photoresist film 12 is formed on regions other than the solder bump formation parts and solders 4a are applied on the film 11. After that, the film 11 is removed along with the film 12 and the solders 4a are melted to form into the spherical solder bumps 4 and can make a flip chip connection with a printed board 6.