Formation method of semiconductor structure

半导体结构的形成方法

Abstract

一种半导体结构的形成方法,包括:提供基底,在所述基底内形成有通孔;形成覆盖于所述基底表面、通孔底部和侧壁表面的金属层;在所述金属层表面形成苯并环丁烯层;在所述苯并环丁烯层表面形成光刻胶膜,所述光刻胶膜封闭所述通孔;对所述光刻胶膜进行烘烤处理;图形化所述光刻胶膜形成光刻胶层,所述光刻胶层位于通孔上方;以所述光刻胶层为掩膜,刻蚀苯并环丁烯层以及金属层直至暴露出基底表面,剩余的金属层为再分布层;去除所述光刻胶层以及苯并环丁烯层。本发明通过在金属层表面形成苯并环丁烯层,以保护位于通孔内的金属层不被刻蚀,提高形成的再分布层的质量,从而提高半导体结构的可靠性以及电学性能。
Provided is a formation method of a semiconductor structure. The formation method includes: a substrate is provided, and a through hole is formed in the substrate; a metal layer is formed on the surface of the substrate, and the bottom and the surfaces of sidewalls of the through hole in a covering manner; a benzocyclobutene layer is formed on the surface of the metal layer; a photoresist film is formed on the surface of the benzocyclobutene layer, and the through hole is sealed by the photoresist film; baking processing of the photoresist film is performed; the patterning of the photoresist film is performed to form a photoresist layer positioned on the through hole; the photoresist layer is regarded as a mask, the benzocyclobutene layer and the metal layer are etched until the surface of the substrate is exposed, and the remaining metal layer is a redistribution layer; and the photoresist layer and the benzocyclobutene layer are removed. According to the formation method, the benzocyclobutene layer is formed on the surface of the metal layer so that the metal layer positioned in the through hole is prevented from being etched, the quality of the formed redistribution layer is improved, and the reliability and electric performance of the semiconductor structure are enhanced.

Claims

Description

Topics

Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)

    Title

Cited By (0)

    Publication numberPublication dateAssigneeTitle